Description : This book covers a detailed study of Operational Transconductance Amplifier (OTA) based circuits, their realizations and applications. The book is primarily concerned with the building blocks and their applications in linear and nonlinear circuit design, presented in a simplified and methodical way. The book comprises nine chapters, covers important building blocks, ideal and non-ideal component simulators.
Description : The Econometric Analysis of Time Series focuses on the statistical aspects of model building, with an emphasis on providing an understanding of the main ideas and concepts in econometrics rather than presenting a series of rigorous proofs.
Description : Study of Electronic Materials and ComponentsClassification of materials based on bandgaps; Types of resistors-fixed, variable and precision etc. like carbon film, metal film, wire wound, cermets, Their standard values specifications and applications, Classification of capacitors based on dielectrics, Standard values, Specifications and applications of capacitors, Types of capacitors-electrolytic, ceramic, paper, mica, tantalum, plastic film etc. Study of different core materials depending on rage of frequencies for inductors and transformers; semiconductor materials, Si, Ge, AIII - BV compounds their properties.Semiconductor PhysicsElectrical properties of Ge and Si materials like intrinsic concentration, mobility, conductivity, energy gap, etc. Law of mass action, Generation and recombination of free charges (Holes/electrons). Diffusion phenomenon, Concentration gradient, Einstein relationship, Volt equivalent of temperature, Total current (drift and diffusion) potential variation within continuous and step graded semiconductor, i.e. p-n junction.Semiconductor Diode CharacteristicsCurrent components in forward biased / reverse biased p-n junction diode; cut-in voltage, Reverse saturation current, Derivation of V/I characteristics (logarithmic) equation of diode, Temperature dependence of diode characteristics, Concepts and significance of expressions of transition and diffusion capacitance, Junction diode switching times.Semiconductor Diode as Circuit Elementp-n junction as rectifier, Half-wave, Full-wave and bridge rectifier with and without capacitor filter, Other types of filters-choke input and L section filters, Parameters like ripple factor, Efficiency, TUF, PIV, IFmax, Isurage, etc. Derivations of ripple factor for L, C and L section filter, Bleeder resistor, Calculations for bridge rectifier with C filter for specified load voltage / current and ripple. Diode as a waveshaping element in clipping and clamping circuits, Voltage multipliers.BJT-Characteristics, Biasing Circuits and Bias StabilityBJT as a two-port device, Configurations of BJT (CE/CB/CC), Input-output and transfer characteristics in all three configurations with relevant V-I expressions and definitions of d.c. current gains, Concept of load line and Q point with active, Cut-off and saturation regions of operations of BJT. Early effect, Punch through effect, Fixed collector feedback and self bias circuits for CE transistor, Definitions of stability factors for CE transistor and their derivations for above circuits; bias stabilization and compensation techniques, Condition to avoid thermal runaway. Absolute maximum rating of BJT as referred to datasheets.BJT as Small Signal LF AmplifierSmall signal LF-h parameter model in CE/CB/CC configuration; concept of A.C. equivalent circuit of single stage amplifier need of coupling and bypass capacitors; analysis CE/CB/CC amplifier for Ai, Av, Ri and Ro in terms of h-parameters; simplified h-parameter model; effect of biasing and source resistance on performance on single stage amplifier, Concept of frequency response.Field Effect TransistorConstruction of p-channel and n-channel JFET/D-MOSFET/E-MOSFET; output and transfer characteristics of each with definitions of parameters like gm, rd and m ; biasing techniques for all types, Small signal LF model of FET; analysis of CS/CD/CG amplifier for voltage gain and input-output impedance; comparison of BJT/JFET and MOSFET frequency response for FET amplifier. Absolute maximum rating/specification of FET as referred to datasheet.Special Semiconductor DevicesConstruction, Principle of operation; functional description with characteristics of each of the following devices; LED, Photo-diode, Photo-transistor, Photo-conductive cell, Photo-voltaic cell, Opto-isolator/coupler, LCD; applications of each.
Description : The book has no illustrations or index. It may have numerous typos or missing text. However, purchasers can download a free scanned copy of the original rare book from the publisher's website (GeneralBooksClub.com). You can also preview excerpts of the book there. Purchasers are also entitled to a free trial membership in the General Books Club where they can select from more than a million books without charge. Original Publisher: London, J. andand A. Churchill; Publication date: 1921; Subjects: Chemistry; Science / Chemistry / General; Science / Chemistry / Clinical;
Description : Biasing of BJT D.C. operating point, BJT characteristics and parameters all biasing, with and without emitter resistance, analysis of above circuits and their design, Variation of operating point and its stability. Small Signal BJT Amplifiers A.C. equivalent circuit, Rin, Av, Ai, Ro, Hybrid, re model and their use in amplifier design, BJT as switch, BJT as a diode, Emitter coupled pair, Design considerations.Design of CE, BJT amplifier. Biasing of FET Types of FET, Characteristics and parameters of JFET, D-MOSFET, E-MOSFET, Different biasing circuits, Their analysis and design, Location of operating point and its stability, CMOS devices. Small Signal FET Amplifiers A.C. operating point, Rin, Av, Ro, Common source, Common drain, Common gate characteristics, Design of CS, JFET amplifier. Power Circuits Design of rectifier circuit with filters (L, LC, C, Multiple LC, L and pi section) and regulator design using zener, BJT in series, BJT in shunt. Power Switching and Control Devices Characteristics, Ratings and applications of silicon controlled switch (SCS), Schottkey diode, DIAC, TRIAC, UJT, PUT, Phototransistor, Light activated SCR, Optical couplers, IGBT, Power MOSFET.
Description : This historic book may have numerous typos and missing text. Purchasers can download a free scanned copy of the original book (without typos) from the publisher. Not indexed. Not illustrated. 1900 Excerpt: ...OXIODIDUM. (Oxy-iodide of Bismuth.) OBiI=350.5. Bismuth subnitrate 12 parts Potassium iodide 7 parts Distilled water 15 parts Mix and digest together in a bottle for an hour, shaking occasionally. Then transfer to a filter, and wash with warm water until the washings are tasteless. Drain, and dry between filterpaper. Reaction. BiON03.H20+KI=KXVf BiOI+H, O. O. Kaspar's Method. Crystallized normal bismuth nitrate 94.5 Gm Distilled water 30 liters Nitric acid, the least quantity sufficient to dissolve the bismuth nitrate in the water. Make a solution: Potassium iodide 33.2 Gm Distilled water 3 liters Dissolve. Mix the two solutions. When the brown precipitate has changed to yellowish and finally to brick-red, wash it by decantation and afterward on a filter, and dry it at about 100 C. B. Fischer's Method. Crystallized normal bismuth nitrate.... 95.4 Gm Glacial acetic acid 120 ml Potassium iodide 33.2 Gm Sodium acetate 5o Gm Distilled water, sufficient. Dissolve the bismuth nitrate in the glacial acetic acid. Dissolve the potassium iodide and the sodium acetate in 2 liters of distilled water. Mix the clear solutions, constantly stirring, pouring the bismuth solution gradually into the other. A yellowish-brown precipitate is formed, which changes to lemon-yellow, and finally to brick-red. Wash the precipitate by decantation and dry it at 100 C. Should be kept protected from light. Description.--A brick-red, micro-crystalline powder, odorless, tasteless, insoluble in water and in alcohol. On ignition it should yield not less than 66 per cent of Bi2O3. Solution of soda, 240 ml, or sufficient. Triturate the bismuth nitrate to powder; add the glycerin and stir until dissolved; then gradually add solution of soda until a precipitate no longer forms, stirring well; was...
Description : The development of cryogenic devices for particle detection has reached a stage at which many interesting applications are conceivable and already have been demonstrated. The book provides a comprehensive review of the field of cryogenic particle detection. It introduces the different detection techniques and gives an overview of the important areas in which these detectors are successfully applied.